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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF122 DESCRIPTION *With TO-220F package *DARLINGTON *High DC current gain *Low collector saturation voltage *Complement to type MJF127 APPLICATIONS *Designed for general-purpose amplifier and switching applications. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -65~150 Open emitter Open base Open collector CONDITIONS VALUE 100 100 5 5 8 120 30 W UNIT V V V A A mA SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=0.1A, IB=0 IC=3A ,IB=12mA IC=5A ,IB=20mA IC=3.0A ; VCE=3V VCB=100V, IE=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=0.5A ; VCE=3V IC=3.0A ; VCE=3V IE=0 ; VCB=10V,f=0.1MHz 1000 2000 MIN 100 TYP. MJF122 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE ICBO ICEO IEBO hFE-1 hFE-2 COB MAX UNIT V 2.0 3.5 2.5 10 10 2.0 V V V A A mA 200 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJF122 Fig.2 Outline dimensions 3 |
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